The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2002
Filed:
Dec. 06, 2000
Jacques Bertrand, Capitola, CA (US);
George Kluth, Los Gatos, CA (US);
Minh Van Ngo, Fremont, CA (US);
Christy Mei-Chu Woo, Cupertino, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A method for manufacturing a semiconductor device employing mixed metal silicide technology is disclosed. The method comprises providing a semiconductor device having a doped silicon region, such as a source/drain, sequentially layering a first metal comprising cobalt, and a second layer comprising nickel over the semiconductor device, and subjecting the device to rapid thermal annealing. The resulting device has a mixed metal silicide layer overtop the doped silicon region, wherein the mixed metal silicide layer and the doped silicon region form a smooth boundary between them.