The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2002
Filed:
Dec. 29, 2000
Applicant:
Inventors:
Thomas Röhr, Puchheim, DE;
Christine Dehm, München, DE;
Carlos Mazure-Espejo, Zorneding, FR;
Assignee:
Infineon Technologies AG, Munich, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/14763 ;
U.S. Cl.
CPC ...
H01L 2/14763 ;
Abstract
Disclosed is a method for producing semiconductor elements including a metal layer ( ) configured on a semiconductor substrate ( ). The inventive method consists of the following steps: a silicon layer ( ) is deposited on a metal layer ( ); an etch mask is applied in order to structure the silicon layer (1%); the silicon layer is selectively etched ( ) using the etch mask ( ); and the metal layer ( ) is structured in an etching process using a selectively etched silicon layer ( ) as a hard mask.