The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2002
Filed:
Aug. 09, 2001
Shigenari Ukita, Plano, TX (US);
Andrew A. Anderson, Allen, TX (US);
Takayuki Niuya, Plano, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A structure and method for fabricating an integrate circuit crown structure for use in a DRAM cell on a substrate comprising a common source/drain region ( ) disposed within a substrate ( ), the common source/drain region ( ) connected to a bitline ( ), a gate oxide ( ) disposed over the common source/drain region ( ) and forming at least two wordline gates ( ), at least two storage node source/drains ( ) adjacent to said gates ( ) and contacted by storage node contacts ( ) and a storage node bowl ( ), the bowl being formed within adjacent supporting layers formed over said wordline gates wherein the storage node bowl ( ) is formed, and electrically isolated from, the bitline ( ) without being exposed to etching agents during its formation and without forming a wine glass stem structure and a crown extending from the top of the storage node bowl ( ), is disclosed.