The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 22, 2002

Filed:

Jan. 24, 2001
Applicant:
Inventors:

Yasuhiro Uemoto, Otsu, JP;

Eiji Fujii, Ibaraki, JP;

Koji Arita, Osaka, JP;

Yoshihisa Nagano, Suita, JP;

Yasuhiro Shimada, Mishima-gun, JP;

Masamichi Azuma, Mishima-gun, JP;

Atsuo Inoue, Otokuni-gun, JP;

Yasufumi Izutsu, Nagaokakyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/120 ;
U.S. Cl.
CPC ...
H01L 2/120 ;
Abstract

A method for fabricating a capacitor for an integrated circuit, comprising the steps of forming a titanium film for an adhesion layer over a substrate, forming a titanium dioxide film for a diffusion barrier layer by annealing the titanium film after ion-implantation of oxygen ion into a surface region of the titanium film so as to change titanium in the surface region to titanium dioxide, and forming a high dielectric constant capacitor on the titanium dioxide film.


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