The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2002
Filed:
Nov. 28, 2000
Yong Sik Yu, Sungnam-Shi, KR;
Kweon Hong, Sungnam-Shi, KR;
Hyundai Electronic Industries Co., Ltd., Ichon-Shi, KR;
Abstract
There is disclosed a method of manufacturing a capacitor in a semiconductor device. In order to solve the problems that it is difficult to secure an effective surface area and a misalignment between a capacitor plug and an underlying electrode occurs in a capacitor having a stack structure using a BST dielectric film, the present invention forms a contact layer and a diffusion prevention film within a first contact hole for plug in a plug shape, forms a second contact hole using an oxide film, deposits an underlying electrode material and then removes the oxide film to form an underlying electrode. Therefore, the present invention has outstanding advantages of increasing the effective surface area of an underlying electrode since a process of etching the underlying electrode which could not be etched easily can be omitted, and preventing diffusion of oxygen upon formation of a dielectric thin film since a direct contact of a metal/oxygen diffusion prevention film and the dielectric film can be avoided. As a result, the present invention can improve an electrical characteristic of a capacitor.