The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2002
Filed:
Nov. 15, 2000
Murty S. Polavarapu, Vienna, VA (US);
Jon Maimon, Manassas, VA (US);
BAE Systems Information and Electronic Systems Integration, Inc., Nashua, NH (US);
Abstract
A method for manufacturing an integrated circuit having high voltage transistors and low voltage transistors is disclosed. First, lightly doped drains are formed in both high voltage transistors and low voltage transistors within the integrated circuit. A thin layer of silicon nitrate film is then deposited on the first and second transistors. Afterwards, a layer of silicon oxide is deposited on the silicon nitride film. After forming oxide spacers on both high voltage transistors and low voltage transistors, the oxide spacers are removed from the low voltage transistors. Finally, diffusion implants are performed on the first and second transistors. As a result, the high voltage transistors possess lightly doped drained junctions.