The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2002
Filed:
Aug. 13, 2001
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
Provided are a semiconductor device in which a MOS transistor of SAC structure and a MOS transistor of salicide structure are provided together, and a method of manufacturing the same. Each gate electrode ( ) of gate structures (GT to GT ) is covered with an upper nitride film ( ) and sidewall nitride film ( ). Therefore, when an interlayer insulating film ( ) being oxide film is selectively removed for forming contact holes (CH and CH ), the upper nitride film ( ) and sidewall nitride film ( ) are not removed, thereby preventing the gate electrode ( ) from being exposed. Particularly, in the gate structures (GT and GT ), even when the contact hole (CH ) is dislocated to either side, no short-circuit is developed between a conductor layer (CL ) and the gate electrode ( ). Thus, the gate structures (GT and GT ) can be disposed without being restricted by the alignment margin of the contact hole (CH ), and the distance between the gates can be reduced for attaining high integration.