The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2002
Filed:
Feb. 11, 2000
Applicant:
Inventors:
Satoshi Machida, Chiba, JP;
Yukito Kawahara, Chiba, JP;
Kentaro Kuhara, Chiba, JP;
Toru Shimizu, Chiba, JP;
Yoshikazu Kojima, Chiba, JP;
Assignee:
Seiko Instruments Inc., , JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/100 ; H01L 2/18238 ;
U.S. Cl.
CPC ...
H01L 2/100 ; H01L 2/18238 ;
Abstract
A method for producing a semiconductor temperature sensor comprises the steps of forming PNP bipolar transistors and PMOS transistors so that a base region of each of the PNP bipolar transistors and a corresponding N-well region of each of the PMOS transistors are formed at the same time, and connecting the PNP bipolar transistors in a Darlington connection.
Machida, Satoshi. (2002). Method for producing semiconductor temperature sensor (U.S. Patent No. 6468825). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6468825
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile