The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2002
Filed:
Feb. 12, 1999
Maurizio Gaibotti, Cesano Maderno, IT;
Nicolas Demange, Lessy, FR;
STMicroelectronics S.r.l., Agrate Brianza, IT;
Abstract
A sense amplifier of the type coupled to a reference bit line and at least one cell array bit line. The sense amplifier includes an amplifying stage and a current voltage conversion circuit that compare a reference current from the reference bit line and a cell current from the cell array bit line. The current-voltage conversion circuit includes a voltage setting circuit for setting predetermined voltages on the reference bit line and the cell array bit line, a load circuit for the reference bit line and the cell array bit line, and current mirror circuits for mirroring the reference current and the cell current into the amplifying stage. The load circuit for the reference bit line and the current mirror circuit for the reference current are different circuits, and the load circuit for the reference bit line includes a transistor that mirrors a predetermined current that is generated outside of the sense amplifier. Another embodiment provides a sense amplifier that includes a first current mirror having one branch coupled to a cell array bit line, and a second current mirror having a branch coupled to both a reference bit line and another branch of the first current mirror. In one preferred embodiment, the second current mirror mirrors a predetermined current that is generated outside of the sense amplifier. A method for sensing the current of a memory cell in a memory device is also provided.