The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2002
Filed:
Mar. 02, 2001
Applicant:
Inventor:
James R. Greener, Ft. Collins, CO (US);
Assignee:
Hewlett-Packard Company, Palo Alto, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03K 1/9096 ; H03K 1/9094 ;
U.S. Cl.
CPC ...
H03K 1/9096 ; H03K 1/9094 ;
Abstract
A dynamic wide NOR gate with improved precharge node capacitance and leakage. This improves speed for many applications. Two precharge nodes are used instead of one. During the evaluate phase of the dynamic gate, the state of the two precharge nodes may be changed by a number of pulldown FETs. The state of these two precharge nodes are combined by a logic function that is enabled during the evaluate phase of the gate to produce a signal that is latched to produce the wide NOR gate output. This latched signal is also used to provide feedback to the precharge nodes to keep them from discharging due to parasitic effects such as the leakage current.