The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2002
Filed:
Aug. 05, 1998
Carl Zeiss Jena GmbH, Jena, DE;
Abstract
The invention describes the use of multiphoton laser scanning microscopy in material analysis, especially in the analysis of structured silicon wafers by using non-optical detection techniques such as, e.g., OBIC (optical beam induced current) or LIVA (light induced voltage alteration). OBIC and LIVA make use of the generation of an electron-hole charge carrier current or a change in potential due to the scanning laser beam to localize lattice defects in crystalline materials, especially p-n junctions. By using the high localization of the multiphoton excitation in all three spatial coordinates using high-aperture microscope objectives in laser scanning microscopy, this technique enables nondestructive three-dimensional localization of crystal defects. Accordingly, this technique advantageously dispenses with the detection of lattice defects by using two-dimensional laser scanning microscopy and the subsequent required successive mechanical removal of the crystal structure in conjunction with electron microscopy for detecting the defects in the third dimension as well.