The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2002
Filed:
Mar. 01, 2000
Kazuo Nakazato, Cambridge, GB;
Kiyoo Ito, Higashikurume, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
In the case of a large capacity DRAM (Dynamic Random Access Memory) of a conventional type, since a signal voltage read out from a memory cell is low, the action thereof is apt to be unstable. If a gain is added to a memory cell to obtain a large output voltage, the area for a memory cell becomes large. Accordingly, a memory cell with RAM action being stable and which requires a small area is needed. A memory cell according to the present invention is provided with MOS transistors to read out storage information, transistors and to write storage information, and a capacitor to control the voltage at the storage node. These component parts are assembled to form a 3-dimensional structure.