The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2002
Filed:
Jun. 08, 2000
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
The process comprises a step of growing epitaxially mixed crystals of a compound semiconductor represented by the composition formula In (Ga Al ) P on a GaAs substrate to form an epi-wafer having an n-type cladding layer (0.45<x<0.50, 0≦y≦1), an active layer a p-type cladding layer and a cover layer a step of removing the cover layer by etching to expose the surface of the p-type cladding layer a step of integrally joining a mirror-polished GaP substrate on the p-type cladding layer by placing the GaP substrate on the cladding layer at room temperature so that the mirror-polished surface of the GaP substrate may come into contact with the p-type cladding layer a step of the subjecting the resultant laminate to a heat treatment; a step of carrying out an etching treatment from the side of the GaAs substrate to expose the n-type cladding layer and a step of forming electrodes on the surface of the n-type cladding layer and on the back surface of the GaP substrate respectively.