The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2002
Filed:
Jun. 20, 2001
Chan Lim, Ichon-shi, KR;
Hyundai Electronics Industries Co., Ltd., Ichon-shi, KR;
Abstract
A method for manufacturing a zirconium oxide film for use in a semiconductor device by using an atomic layer deposition (ALD) which begins with setting a wafer in a reaction chamber. Thereafter, a zirconium source material of Zr(OC(CH ) ) (zirconium tetra-tert-butoxide) is supplied into the reaction chamber and then, an unreacted Zr(OC(CH ) ) is removed by a N purge or a vacuum purge. Subsequently, an oxygen source material is supplied into the reaction chamber, wherein the oxygen source material is selected from the group consisting of vaporized water (H O), O gas, N O gas and O gas. Finally, an unreacted oxygen source material is purged out from the reaction chamber.