The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2002
Filed:
Mar. 13, 2000
Mitsuru Taguchi, Tokyo, JP;
Naoki Komai, Kanagawa, JP;
Sony Corporation, , JP;
Abstract
The object of the invention is to solve failure in embedding conductive material by electroplating caused because organic insulating material is deformed by the compressive stress of a barrier metal layer such as tantalum nitride used for grooved interconnection, a groove-used for grooved interconnection is deformed and a seed layer is not fully formed in the groove and to enhance reliability upon interconnection. To achieve the object, a semiconductor device according to the invention is based upon a semiconductor device having a groove formed through a second insulating film over a substrate, a barrier metal layer formed at least on the inner wall of the groove and grooved interconnection embedded inside the groove via the barrier metal layer and is characterized in that a concave portion is continuously or intermittently formed along a groove through a second insulating film within a predetermined interval from grooved interconnection.