The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2002
Filed:
Jan. 10, 2000
Constantin Papadas, Gieres, FR;
Jorge L. Regolini, Bernin, FR;
Thomas Skotnicki, Crolles, FR;
André Grouillet, Grenoble, FR;
Christine Morin, Seyssins, FR;
STMicroelectronics S.A., Gentilly, FR;
Abstract
The invention is directed to a method of manufacturing an area of a first type of conductivity extending a depth into a semiconductor substrate and having a doping gradient as a function of the depth into the semiconductor substrate. The method comprises acts of providing a semiconductor substrate of the first type of conductivity; implanting nitrogen in an upper surface of the semiconductor substrate, with a dose in a range of between approximately 5.10 and 5.10 at./cm , annealing the semiconductor substrate; and growing an epitaxial layer on the substrate of the first type of conductivity having a doping level lower than the semiconductor substrate.