The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2002
Filed:
Jun. 26, 2001
Jae-Goo Lee, Seoul, KR;
Chang-Hyun Cho, Seoul, KR;
Abstract
Self aligned contact pads in a semicondductor device and a method for forming thereof within etching back process is carried out on the contact pad comprising material and insulating layer down to the top surface of a capping layer of a gate electrode, and also portions of the capping layer is selectively etched with respect to the contact pad composing material at the end of the etching back process and thereby forming the contact pads to be electrically separated from each other. SAC is opened by etching insulating layer selectively to the capping layer using SAC gate mask. A conductive material as for SAC pad is deposited over the insulating layer to fill the SAC opening. Etching back process is carried out to form the SAC pad.