The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2002
Filed:
May. 16, 2001
Jeong-Tae Kim, Ichon-shi, KR;
Yong-Sik Yu, Ichon-shi, KR;
Hyundai Electronics Industries Co., Ltd., Ichon, KR;
Abstract
A method for manufacturing a semiconductor device including steps of a) preparing an active matrix provided with at least one diffusion region and an insulating layer formed thereon; b) patterning the insulating layer into a predetermined configuration, thereby exposing the diffusion regions; c) forming metal silicide films on the exposed diffusion regions; d) forming a metal layer on the exposed diffusion regions and the insulating layer; e) patterning the metal layer to a preset configuration, thereby obtaining supporting members on the metal silicide films; f) forming bottom electrodes on the supporting members; and g) forming capacitor dielectrics and top electrodes on the bottom electrodes.