The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2002
Filed:
Jun. 28, 2000
Kwon Hong, Ichon-shi, KR;
Yong-Sik Yu, Ichon-shi, KR;
Hyundai Electronics Industries Co., Ltd., Ichon-shi, KR;
Abstract
A semiconductor device for use in a memory cell includes an active matrix provided with a semiconductor substrate, a transistor formed on the semiconductor substrate, an isolation region for isolating the transistor and an insulating layer formed on top of the transistor and the isolation region; and a capacitor structure, formed on top of the insulating layer, composed of a bottom electrode, a capacitor thin film placed on top of the bottom electrode and a top electrode formed on top of the capacitor thin film, wherein the capacitor thin film is made of Nb doped lead zirconate titanate (PNZT). In the device, the PNZT is formed by using a sol-gel coating solution is represented by a formula Pb Pb (Zr Ti ) O , where x is equal to 0˜0.05 assuming that Nb compensates charges generated by Pb vacancies. The semiconductor device can lower leakage current approximately 2 order by adding Nb dopants to the PZT. Further, the present invention is capable of forming the capacitance thin film on the bottom electrode at a low temperature by spin coating the PNZT coating solution in the form of sol-gel.