The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2002
Filed:
Aug. 31, 2001
Tsuneo Ikura, Osaka, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
After forming a first insulating film with a relatively low dielectric constant and low mechanical strength on a semiconductor substrate, a mask pattern is formed on a desired region of the first insulating film. Then, the first insulating film is patterned by conducting selective etching using the mask pattern. After forming a second insulating film with a relatively high dielectric constant and high mechanical strength on the semiconductor substrate, the second insulating film is planarized by polishing, so as to expose a face of the patterned first insulating film. An interconnect groove is formed in the patterned first insulating film, and a buried interconnect is formed in the interconnect groove.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile