The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2002
Filed:
Feb. 12, 2001
Godefridus A. M. Hurkx, Best, NL;
Rob van Dalen, Eindhoven, NL;
Koninklijke Philips Electronics N.V., Eindhoven, NL;
Abstract
A semiconductor body ( ) has first and second opposed major surfaces ( and ), with a first region ( ) of one conductivity type and a plurality of body regions ( ) of the opposite conductivity type each forming a pn junction with the first region ( ). A plurality of source regions ( ) meet the first major surface ( ) and are each associated with a corresponding body region ( ) such that a conduction channel accommodating portion (33 ) is defined between each source region ( ) and the corresponding body region ( ). An insulated gate structure ( ) adjoins each conduction channel area ( ) for controlling formation of a conduction channel in the conduction channel areas to control majority charge carrier flow from the source regions ( ) through the first region ( ) to a further region ( ) adjoining the second major surface ( ). A plurality of field shaping regions ( ) are dispersed within the first region ( ) and extend from the source regions ( ) towards the further region ( ) such that, in use, a voltage is applied between the source and further regions ( and ) and the device is non-conducting, the field shaping regions ( ) provide a path for charge carriers from the source regions at least partially through the first region and cause a depletion region in the first region ( ) to extend through the first region ( ) towards the further region ( ) to increase the reverse breakdown voltage of the device.