The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2002
Filed:
Mar. 22, 2001
Applicant:
Inventors:
Tatsuya Usuki, Kawasaki, JP;
Naoto Horiguchi, Kawasaki, JP;
Assignee:
Fujitsu Limited, Kawasaki, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/9788 ;
U.S. Cl.
CPC ...
H01L 2/9788 ;
Abstract
To provide a semiconductor device which can retain information for a long period of time even in a case that the tunnel insulation film is thin. A semiconductor device comprises a first insulation film formed on a semiconductor substrate , a floating gate electrode formed on the first insulation film, a second insulation film formed on the floating gate electrode, and a control gate electrode formed on the second insulation film. A depletion layer is formed in the floating gate electrode near the first insulation film in a state that no voltage is applied between the floating gate electrode and the semiconductor substrate.