The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2002
Filed:
Nov. 14, 2000
Applicant:
Inventor:
Yosuke Miyoshi, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1331 ;
U.S. Cl.
CPC ...
H01L 2/1331 ;
Abstract
A bipolar transistor is disclosed, that comprises a collector layer of first conduction type, a base layer of second conduction type, formed on the collector layer, a prevention layer, formed on the base layer, for preventing carriers from being recombined, an emitter layer of first conduction type, formed on a first part of the prevention layer, and a base electrode, formed on a second part separated from the first part of the prevention layer.
Miyoshi, Yosuke. (2002). Heterojunction bipolar transistor having prevention layer between base and emitter (U.S. Patent No. 6462362). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6462362
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile