The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2002
Filed:
Sep. 29, 1999
Sang-kuen Oh, Suwon, KR;
Samsung Electronics Co., Ltd., Suwon, KR;
Abstract
An charge exchanger for changing the polarity of an ion beam includes an charge exchange member provided in the path of an ion beam, and through which the ion beam can pass, and charge conversion material coating the surface of the charge exchange member. The charge conversion material is, for example, a fine powder of particles of magnesium against which the ion beam collides. The charge exchange rate caused by such collisions is controlled based on the measured dosage of ions injected into a target or on predetermined ion injection conditions. First, a desired ion dosage is determined based on the specifics of the ion implantation to be carried out. Then, an ion beam is injected onto a wafer after having been passed through the charge exchanger. Finally, the charge exchange member is advanced at a speed which establishes an charge exchange rate that gives rise to conditions necessary for the specific ion implantation process to occur.