The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2002
Filed:
Aug. 28, 2001
Applicant:
Inventors:
Kazuhiro Mochizuki, Tokyo, JP;
Tohru Oka, Osaka, JP;
Isao Ohbu, Sagamihara, JP;
Kiichi Yamashita, Shiroyama, JP;
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1331 ;
U.S. Cl.
CPC ...
H01L 2/1331 ;
Abstract
In the case of a semiconductor device where a base electrode in a collector top heterojunction bipolar transistor is disposed so as to contact with the side face of a base layer in which no ion is implanted and the surface of a high resistance extrinsic emitter area in which ion is implanted, the dependence of the current gain in the collector top HBT on the collector size can be diminished.