The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2002
Filed:
Nov. 30, 1999
Yoshiyuki Shibata, Shiga, JP;
Matsushita Electronics Corporation, Osaka, JP;
Abstract
First, an isolation region is formed on a surface portion of a semiconductor substrate of silicon, thereby defining first and second regions, which are isolated from each other by the isolation region, on the semiconductor substrate. Next, a tantalum oxide film is formed in the first region on the semiconductor substrate. Then, a silicon dioxide film is formed in the second region on the semiconductor substrate by heat-treating the semiconductor substrate within an ambient containing oxygen as a main component. Subsequently, first and second gate electrodes are formed on the tantalum oxide and silicon dioxide films, respectively. Thereafter, first and second gate insulating films are formed by etching the tantalum oxide and silicon dioxide films using the first and second gate electrodes as respective masks.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile