The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2002
Filed:
Aug. 29, 2001
Douglas R. Roberts, Austin, TX (US);
Eric Luckowski, Round Rock, TX (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
A process for forming a metal-insulator-metal (MIM) capacitor structure includes forming a recess in the dielectric layer ( ) of a semiconductor substrate ( ). A first capacitor electrode ( ) is formed in the recess having a copper first metal layer ( ) with a conductive oxidation barrier ( ) formed over the first metal layer ( ). The first capacitor electrode ( ) is planarized relative to the dielectric layer ( ). An insulator ( ) is formed over the first capacitor electrode ( ) and a second capacitor electrode ( ) is formed over the insulator ( ). Forming the first capacitor electrode ( ) in the recess maintains the alignment of a periphery of the copper first metal layer ( ) with the conductive oxidation barrier ( ).