The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2002
Filed:
Nov. 08, 2000
Dong Su Park, Ichon-shi, KR;
Kwang Seok Jeon, Ichon-shi, KR;
Hyundai Electronics Industries Co., Ltd., Ichon-shi, KR;
Abstract
The present invention relates to a method of manufacturing a capacitor in a semiconductor device capable of improving the leak current characteristic while preventing degradation of a dielectric characteristic of a Ta O capacitor. The present invention includes forming a Ta O dielectric film on a lower electrode and then forming a TaN upper electrode on the Ta O dielectric film using a H TaF reactive source gas or a NH gas. Thus, the present invention can improve the leak current characteristic since the TaN thin film has a large work function than the TiN thin film used as the conventional upper electrode. Also, as the H TaF gas used in the present invention can be used as the source gas for depositing the Ta O dielectric film, the Ta O dielectric film and the TaN upper electrode can be simultaneously formed in in-situ at the same chamber.