The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2002
Filed:
Aug. 17, 1999
Norihiko Samoto, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A method of fabricating a semiconductor device that makes it possible to decrease the thermal resistance of the semiconductor device is provided. First, a semiconductor base layer is formed over a main surface of a semiconductor substrate. Then, the semiconductor base layer on which the at least one device structure has been formed is separated from the main surface of the semiconductor substrate. Further, the semiconductor base layer on which the at least one device structure has been formed and separated from the main, surface of the semiconductor substrate is attached onto a main surface of a diamond substrate. Finally, the semiconductor base layer thus attached is fixed to the main surface of the diamond substrate. The semiconductor base layer is preferably formed over the main surface of the semiconductor substrate through an intervening sacrificial layer. Also, the semiconductor base layer is separated from the main surface of the semiconductor substrate by removing the sacrificial layer. The semiconductor base layer is fixed to the main surface of the diamond substrate by physical absorption or an intermolecular force such as a van der Waals force.