The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2002
Filed:
Jun. 30, 2000
Applicant:
Inventors:
Hiroshi Shinyashiki, Tokyo, JP;
Hiroshi Koya, Tokyo, JP;
Tomonori Yamaoka, Tokyo, JP;
Kazuhito Matsukawa, Tokyo, JP;
Yasuhiro Kimura, Tokyo, JP;
Hidekazu Yamamoto, Tokyo, JP;
Assignee:
Mitsubish Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/900 ;
U.S. Cl.
CPC ...
H01L 2/900 ;
Abstract
A substrate having a surface on which silicon is epitaxially grown; wherein the substrate is cut from an oxygen induced stacking fault generation area of a single crystal silicon rod grown by the Czochralski method.
Shinyashiki, Hiroshi. (2002). Substrate for epitaxial growth (U.S. Patent No. 6461447). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6461447
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile