The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2002
Filed:
Dec. 01, 2000
Applicant:
Inventors:
Kuniharu Inoue, Amagasaki, JP;
Jiro Inoue, Amagasaki, JP;
Hazimu Ohnishi, Osaka, JP;
Hisao Yamamoto, Takarazuka, JP;
Assignee:
Sumitomo Metal Industries, Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 1/520 ;
U.S. Cl.
CPC ...
C30B 1/520 ;
Abstract
The production efficiency of silicon single crystal produced by additional charge or recharge method is improved by avoiding loss due to undissolved portion of poly-silicon rod supplied in the additional charge or recharge. A poly-silicon rod as an additional charge is brought down in a silicon melt in a crucible , while being directly supported by a seed crystal . The poly-silicon rod is brought down to be totally supplied to the silicon melt , and then silicon single crystal is pulled using the seed crystal