The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6459709 B1

PDF
Full Text
Expired
Date of Patent:
Oct. 01, 2002

Filed:

Jan. 31, 2001
Applicant:
Inventors:

Yu-Hwa Lo, San Diego, CA (US);

Steven Gregg Hummel, Los Altos, CA (US);

Chenting Lin, Poughkeepsi, NY (US);

Chau-Hong Kuo, Sunnyvale, CA (US);

Mei-Ling Shek-Stefan, Sunnyvale, CA (US);

Sergey V. Zaytsev, Cupertino, CA (US);

Assignee:

Nova Crystals, Inc., San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/00 ; H01S 3/10 ;
U.S. Cl.
CPC ...
H01S 5/00 ; H01S 3/10 ;
Abstract

A wavelength-tunable distributed feedback (DFB) laser is disclosed where the lasing wavelength can be adjusted by adjusting the bias current of the laser diode. Since the output power of the laser diode also changes with the bias current, a one-to-one correspondence between the lasing wavelength and the output power of the laser can be established. Consequently, the lasing wavelength can be measured directly from the photocurrent of a power monitoring detector facing the back-end of the laser diode. This provides an extremely simple method for wavelength monitoring.


Find Patent Forward Citations

Lo, Yu-Hwa. (2002). Wavelength-tunable semiconductor laser diode (U.S. Patent No. 6459709). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6459709

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