The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 01, 2002

Filed:

Jan. 23, 2001
Applicant:
Inventors:

Colin S. Bill, Cupertino, CA (US);

Jonathan S. Su, Gabriel, CA (US);

Ravi P. Gutala, San Jose, CA (US);

Assignee:

Advanced Micro Devices, Inc., Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 1/604 ; G11C 5/02 ;
U.S. Cl.
CPC ...
G11C 1/604 ; G11C 5/02 ;
Abstract

The present invention discloses a method and system to optimize electrical interconnection of electrical components in a periphery area of a memory device thereby minimizing the periphery area. The periphery area is divided into a plurality of sub-circuits formed by selectively electrically connecting the electrical components. Electrical interconnection of the electrical components to form the sub-circuits is accomplished using a first metal layer and a second metal layer. The first metal layer is formed to create a plurality of first metal layer lines that are oriented to extend in substantially one direction on the memory device. The second metal layer is formed to create a plurality of second metal layer lines that are oriented to extend substantially perpendicular to the first metal layer lines. The plurality of sub-circuits are electrically interconnected using a third metal layer that is formed to create a plurality of third metal layer lines that are oriented to extend substantially parallel to the first metal layer lines.


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