The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2002
Filed:
May. 11, 2001
Tohru Mogami, Tokyo, JP;
Mitsuhiro Togo, Tokyo, JP;
Koji Watanabe, Tokyo, JP;
Toyoji Yamamoto, Tokyo, JP;
Nobuyuki Ikarashi, Tokyo, JP;
Kazutoshi Shiba, Tokyo, JP;
Toru Tatsumi, Tokyo, JP;
Haruhiko Ono, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A MIS transistor has a gate insulating film made of silicon oxynitride and having a specific dielectric constant which is larger than the expected specific dielectric constant calculated based on a weighted average of the specific dielectric constants based on the weight ratio of the silicon oxide and the silicon nitride contained in the silicon oxynitride film. The gate insulating film having a smaller thickness prevents impurities in the overlying gate electrode from penetrating through the gate insulating film to degrade the silicon substrate.