Reticles for charged-particle-beam microlithography that exhibit reduced warp at pattern-defining regions, and semiconductor-device-fabrication methods using same

Abstract

Reticles and reticle blanks are disclosed for performing charged-particle-beam (CPB) microlithography. The reticles typically include a rigid peripheral frame attached to a reticle portion. Such attachment can cause warping, and thus deformation, of the reticle portion. To reduce such warp, the reticle portion comprises an inner supporting part (surrounding a pattern-defining region) surrounded by an outer supporting part. Situated between the inner and outer supporting parts are multiple connecting structures. The connecting structures can have spring characteristics that collectively absorb warp. Alternatively, the connecting structures can include respective driving mechanisms. The driving mechanisms are especially adapted to cause, when electrically activated, local electrostatic attraction between a respective first conductive region (located on the outer supporting part) and a respective second conductive region (located on the inner supporting part). Selective energization of the connecting structures causes micro movement of inner supporting part (and thus the pattern-defining region) relative to the outer supporting part, thereby canceling reticle warp.