The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 01, 2002

Filed:

Jun. 01, 2000
Applicant:
Inventors:

Tomoyuki Morita, Tokyo, JP;

Yusuke Harada, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/131 ; H01L 2/1469 ;
U.S. Cl.
CPC ...
H01L 2/131 ; H01L 2/1469 ;
Abstract

A method of manufacturing a semiconductor device, according to the present invention comprises a step for forming an insulating film over a semiconductor wafer and thereafter subjecting the same to photolithography and etching to thereby define a contact hole, a step for forming an adhesive layer over the insulating film with the contact hole defined therein, a step for placing the interior of a processing chamber under an atmosphere uncontaining oxygen and subjecting the adhesive layer to heat treatment, a step for setting the temperature of the semiconductor wafer to less than or equal to a temperature equivalent to energy of such an extent as to cut the bonding between atoms which form the adhesive layer and thereafter taking the semiconductor wafer out of the processing chamber, and a step for forming an embedding film to be embedded in the contact hole.


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