The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 01, 2002

Filed:

Apr. 11, 2001
Applicant:
Inventor:

Michal Edith Gross, Somerset, NJ (US);

Assignee:

Agere Systems Guardian Corp, Orlando, FL (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/144 ; C25D 5/02 ; C25D 7/04 ; C25D 7/12 ;
U.S. Cl.
CPC ...
H01L 2/144 ; C25D 5/02 ; C25D 7/04 ; C25D 7/12 ;
Abstract

The specification describes interconnection techniques for interconnecting large arrays of micromechanical devices on a silicon platform. Interconnections are routed through vias extending through the thickness of the substrate. The vias are formed by etching holes through the silicon wafer, depositing an insulating layer on the sidewalls of the holes, depositing a barrier layer on the insulating layer, electrolytically depositing a metal selected from the group consisting of copper and nickel to form via plugs in the holes, and depositing another barrier layer over the via plugs. It is found that electrolytic deposition will successfully plug the holes even when the aspect ratio of the through holes is greater than four and the hole diameter less than 100 microns.


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