The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2002
Filed:
Dec. 14, 1999
Takashi Marukawa, Shiga-ken, JP;
Abstract
A semiconductor device includes: a semiconductor substrate; an active layer; and a plasma-processed layer provided between the semiconductor substrate and the active layer. The plasma-processed layer has a deep level. First and second electrodes are electrically connected by ohmic contact with first and second portions of the active layer, respectively. The first and second portions are spaced apart at a predetermined interval from each other. A third electrode is formed on a third respective portion of the active layer and is located between the first and second portions of the active layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile