The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2002
Filed:
Sep. 01, 2000
Applicant:
Inventors:
Tae Ho Yoon, Taejeon-Kwangyeoksi, KR;
Sang Hoon Cheon, Taejeon-Kwangyeoksi, KR;
Song Cheol Hong, Taejeon-Kwangyeoksi, KR;
Heung Seob Koo, Taejeon-Kwangyeoksi, KR;
Sea Houng Cho, Taejeon-Kwangyeoksi, KR;
Assignee:
Other;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/1331 ;
U.S. Cl.
CPC ...
H01L 2/1331 ;
Abstract
Disclosed is a method for manufacturing a hetero junction bipolar transistor capable of forming a ledge by using a low-priced contact aligner and in a selective wet etching manner, without having any expensive stepper and dry etching and forming a ballasting resistor, without having an additional NiCr thin film, whereby the manufacturing processes thereof can be embodied in simple and easy manners, thereby improving productivity and an economical efficiency.