The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2002
Filed:
Nov. 30, 2000
Applicant:
Inventors:
Frank Richter, Weixdorf, DE;
Dieter Temmpler, Dresden, DE;
Assignee:
Infineon Technologies AG, Munich, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1336 ;
U.S. Cl.
CPC ...
H01L 2/1336 ;
Abstract
A simple method for fabricating a field-effect transistor having an anti-punch-through implantation region is provided. After the anti-punch-through implantation region is formed, a semiconductor substrate is locally oxidized by using a mask layer in order to form a gate insulation layer. The method allows the fabrication of field-effect transistors having improved short-channel properties.