The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2002
Filed:
Dec. 27, 2001
Se-Myeong Jang, Kyungki-do, KR;
Samsung Electronics Co., Ltd., Hwasung, KR;
Abstract
A method for forming a lower electrode of a cylinder-shaped capacitor is provided to prevent etch skew and twin bit failure. The method includes sequentially forming a buffer layer and an etch stopper on a semiconductor substrate including a conductive region, forming a sacrificial dielectric layer on the etch stopper, forming a first opening within the sacrificial dielectric layer by etching a portion of the sacrificial dielectric layer using the etch stopper, depositing a slope-improving layer for improving sidewall slope of the first opening, forming a second opening by etching a portion of the slope-improving layer, the etch stopper and the buffer layer under the first opening and exposing the conductive region to which the cylinder-shaped capacitor is electrically connected, depositing a conductive layer for forming cylinder-shaped lower electrodes on a surface of the second opening, and forming the cylinder-shaped lower electrodes separated from each other.