The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2002
Filed:
Dec. 17, 1999
Simon J. Molloy, Orlando, FL (US);
Nace Layadi, Orlando, FL (US);
Edward Belden Harris, Orlando, FL (US);
Sidhartha Sen, Orlando, FL (US);
Agere Systems Guardian Corp., Allentown, PA (US);
Abstract
A method for fabricating an MOM capacitor ( ) includes forming a first conductive layer ( ) on an insulating support ( ), depositing a dielectric film ( ) on the conductive layer, and patterning the dielectric film to define the capacitor feature. The dielectric film may comprise a stack of oxide and nitride layers ( ). The dielectric is etched anisotropically with a fluorocarbon plasma to remove unwanted dielectric material ( ) around the capacitor feature. Sidewalls ( ), built up during the anisotropic etch as a result of sputtering the first conductive layer during the necessary overetch, are removed in a low power, higher pressure etch with an SF plasma, which is substantially isotropic in character. The process allows a sidewall-free capacitor to be formed in a single reactor without the need for solvent cleaning to remove the sidewall material.