The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2002
Filed:
Apr. 18, 2001
Keith C. Stevens, Fairfield, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of substantially reducing charge build-up in a SOI device is provided. The method includes depositing a dielectric material on a surface of a semiconductor structure which includes at least silicon-on-insulator (SOI) devices therein. Next, a first conductive material is deposited on the dielectric material and then holes are drilled through the conductive material and the dielectric insulating material. Each hole is filled with a second conductive material, and thereafter selective portions of the first conductive material are removed to form contact pads for further probing. The method is especially useful in focused ion beam (FIB) drilling.