The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2002
Filed:
Jul. 06, 1999
Lizabeth Ann Keser, Chandler, AZ (US);
Treliant Fang, Chandler, AZ (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
A semiconductor component ( ) having a photodefinable stress compensation layer ( ) and composition for the stress compensation material. The photodefinable stress compensation material is formed on a semiconductor wafer ( ) and openings ( ) are made photolithographically. Conductive bumps ( ) are then disposed thereon and additional conductive bumps ( ) are formed on the original conductive bumps ( ). The photodefinable stress compensation material is composed of a photoinitiator, an epoxy having a first index of refraction, a diluent, and a filler. The indices of refraction of the epoxy-diluent combination and the filler are approximately equal. Alternatively, the photodefinable stress compensation material can be formed on a semiconductor wafer ( ) having conductive bumps ( ) disposed thereon. Openings ( ) are formed in the stress compensation layer ( ) to expose the conductive bumps ( ). Additional conductive bumps ( ) are formed on the original conductive bumps ( ).