The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2002
Filed:
Dec. 20, 2001
Woo-Seok Yang, Ichon-shi, KR;
Hynix Semiconductor Inc., Ichon-shi, KR;
Abstract
A method for fabricating a capacitor comprises the steps of performing a planarization process after forming a diffusion barrier on a semiconductor substrate including a plug and a silicide layer, depositing a adhesion layer on the entire structure and exposing the diffusion barrier by a selectively etching process, sequentially depositing a bottom electrode, a ferroelectric layer and a top electrode on the entire structure, forming a top electrode pattern performing a plasma etching process and a first recovery thermal treatment process and forming a ferroelectric layer and bottom electrode patterns by performing a plasma etching process and a second recovery thermal treatment process.