The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2002
Filed:
Jul. 23, 2001
Applicant:
Inventors:
Takashi Yunogami, Niiza, JP;
Kenichi Shoji, Landshut, DE;
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/100 ;
U.S. Cl.
CPC ...
H01L 2/100 ;
Abstract
According to the invention of the present application, for providing an etching technique for a wiring layer capable of decreasing the degradation of characteristics of a ferroelectric film in FeRAM, a wiring material (LI wiring , Al wiring ) connected with an electrode layer of a ferroelectric film (lower electrode , upper electrode ) is fabricated by dry etching using inducely coupled plasma upon forming the wiring layer and, successively, applied with an asher treatment at a temperature of 300° C. or higher by using inducely coupled plasma while introducing a gas mixture, for example, of O +CF +H O.