The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 01, 2002

Filed:

Mar. 18, 1997
Applicant:
Inventors:

Thierry Caillat, Pasadena, CA (US);

Alexander Borshchevsky, Santa Monica, CA (US);

Jean-Pierre Fleurial, Duarte, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 2/910 ;
U.S. Cl.
CPC ...
C30B 2/910 ;
Abstract

The present invention is embodied in high performance p-type thermoelectric materials having enhanced thermoelectric properties and the methods of preparing such materials. In one aspect of the invention, p-type semiconductors of formula Zn A Sb B wherein 0≦x≦4, A is a transition metal, B is a pnicogen, and 0≦y≦3 are formed for use in manufacturing thermoelectric devices with substantially enhanced operating characteristics and improved efficiency. Two methods of preparing p-type Zn Sb and related alloys of the present invention include a crystal growth method and a powder metallurgy method.


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