The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2002
Filed:
Apr. 27, 2000
Tadayuki Hanamoto, Kanagawa, JP;
Shigeo Morimoto, Kanagawa, JP;
Masato Moriya, Kanagawa, JP;
Toshirou Kotooka, Kanagawa, JP;
Other;
Abstract
There are provided a CZ system for manufacturing a single-crystal ingot, which produces a perfect crystal with good reproducibility through growth of a single-crystal ingot, as well as a method of manufacturing the single-crystal ingot. A system of manufacturing a single-crystal ingot by pulling a single-crystal ingot from molten raw material by means of a Czochralski technique, the system including measurement means for measuring the distance between the level of molten raw material and the bottom of a heat-shielding member. On the basis of the thus-measured distance, the temperature gradient of area G of the single-crystal pulled silicon ingot is controlled so as to produce a perfect crystal with good reproducibility, by means of controlling any factor for pulling a single-crystal silicon ingot selected from the group comprising the amount of heat applied to silicon melt, the level of silicon melt, and the pull rate of a single-crystal silicon ingot.