The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 24, 2002
Filed:
Aug. 18, 1999
Applicant:
Inventors:
Fernando J. Guarin, Millbrook, NY (US);
Anastasios A. Katsetos, Poughkeepie, NY (US);
Stewart E. Rauch, III, Poughkeepie, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 3/102 ;
U.S. Cl.
CPC ...
G01R 3/102 ;
Abstract
A MOSFET test structure and associated electronics for rapidly heating the MOSFET gate oxide and for applying a stress voltage to the gate. The structure has at least one polysilicon gate with two spaced contacts that permit a heating current to flow through the gate thus rapidly raising the gate temperature to a desired level. External electronics permit applying a measured stress voltage to the gate. The structure is particularly useful in NBTI testing of p-MOSFETs.