The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 24, 2002
Filed:
Jun. 24, 1999
Andreas Gehrmann, Dortmund, DE;
Ralf Bornefeld, Schalksmuehle, DE;
ELMOS Semiconductor AG, Dortmund, DE;
Abstract
The MOS transistor with high voltage sustaining capability and low closing resistance comprises a substrate doped with charge carriers of a first line type. In the substrate drain and source regions are configured doped with charge carriers of a second line type opposed to the first line type. Further, the MOS transistor is provided with a gate electrode arranged in the region between the drain and the source regions on the substrate and comprising a drain-side end region. A drain extension region is doped with charge carriers of the second line type, connected with the drain region and extends to below the drain-side end of the gate electrode. The drain extension region is produced by an ion implantation process comprising at least a first implantation step. The drain extension region comprises in its region near the top side and facing the top side of the substrate a lower doping material concentration than in its region below the region near the top side.